Semiconductor chip, semiconductor package including the same, and method of manufacturing semiconductor chip

ABSTRACT

The semiconductor chip including a semiconductor device layer including a pad region and a cell region, a plurality of uppermost wirings formed on the semiconductor device layer to be arranged at an equal distance in the cell region, a passivation layer formed in the cell region and the pad region, and a plurality of thermal bumps disposed on the passivation layer to be electrically insulated from the plurality of uppermost wirings may be provided. The semiconductor device layer may include a plurality of through silicon via (TSV) structures in the pad region. The plurality of uppermost wirings may extend in parallel along one direction and have a same width. The passivation layer may cover at least a top surface of the plurality of uppermost wirings in the cell region and includes a top surface having a wave shape.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims under 35 U.S.C. §119 priority to Korean PatentApplication No. 10-2015-0175349, filed on Dec. 9, 2015, in the KoreanIntellectual Property Office, the disclosure of which is incorporatedherein in its entirety by reference.

BACKGROUND

The inventive concepts relate to semiconductor chips, semiconductorpackages including the same, and/or methods of manufacturing thesemiconductor chips, and more particularly, to semiconductor chipshaving a through silicon via (TSV) structure, semiconductor packagesincluding the same, and/or methods of manufacturing the semiconductorchips having the TSV structure.

As the electronic industry rapidly advances and user demands increase,electronic devices are becoming more and more miniaturized andlightened. Semiconductor packages applied to electronic devices shouldhave relatively high performance and a relatively large capacity, inaddition to miniaturization and lightness. Research and development arecontinuously being conducted on a semiconductor chip having a TSVstructure and a semiconductor package including the same to realize suchobjectives.

SUMMARY

The inventive concepts provide semiconductor chips, semiconductorpackages including the same, and/or methods of manufacturing thesemiconductor chip, which realize relatively high performance and arelatively large capacity in addition to miniaturization and lightness.

According to an example embodiment of the inventive concepts, asemiconductor chip includes a semiconductor device layer including a padregion and a cell region, the semiconductor device layer including aplurality of through silicon via (TSV) structures in the pad region, aplurality of uppermost wirings on the semiconductor device layer, theplurality of uppermost wirings arranged at an equal distance in the cellregion, the plurality of uppermost wirings having a same width andextending in parallel along one direction, a passivation layer in thecell region and the pad region, the passivation layer covering at leasta top surface of the plurality of uppermost wirings in the cell region,the top surface of the passivation layer in the cell region having awave shape, and a plurality of thermal bumps on the passivation layer,the plurality of thermal bumps electrically insulated from the pluralityof uppermost wirings.

According to an example embodiment of the inventive concepts, asemiconductor package includes a package substrate and a plurality ofsemiconductor chips sequentially stacked on the package substrate, eachof the plurality of semiconductor chips including a pad region and acell region, wherein each of the plurality of semiconductor chipsincludes a semiconductor device layer including a plurality of throughsilicon via (TSV) structures in the pad region, a plurality of uppermostwirings on the semiconductor device layer, the plurality of uppermostwirings arranged at an equal distance in the cell region, the pluralityof uppermost wirings having a same width and extending in parallel alongone direction, a plurality of pads on the semiconductor device layer,the plurality of pads connected to the plurality of TSV structures inthe pad region, a passivation layer including a bump hole, the bump holeexposing a portion of a top surface of each of the plurality of pads,the passivation layer covering at least a top surface of the pluralityof uppermost wirings in the cell region, a plurality of thermal bumps onthe passivation layer in the cell region, the plurality of thermal bumpselectrically insulated from the plurality of uppermost wirings, and aplurality of signal bumps on the passivation layer in the pad region,the plurality of signal bumps electrically connected to the plurality ofpads through the bump hole.

According to an example embodiment of the inventive concepts, a methodof manufacturing a semiconductor chip includes preparing a semiconductordevice layer including a pad region and a cell region, the semiconductordevice layer including a plurality of through silicon via (TSV)structures in the pad region, forming a plurality of uppermost wiringson the semiconductor device layer such that the plurality of uppermostwirings plurality of uppermost wirings are arranged at an equal distancein the cell region, the plurality of uppermost wirings extending inparallel along one direction and having a same width, forming aplurality of pads in the pad region such that the plurality of pads areconnected to the plurality of TSV structures in the pad region, forminga passivation layer to cover at least a portion of a top surface of eachof the plurality of pads and the plurality of uppermost wirings in thecell region, the passivation layer including a top surface having a stepheight, forming a mask pattern on the passivation layer such that themask pattern exposes the at least a portion of the top surface of eachof the plurality of pads and a portion of the passivation layer, andforming a pillar layer and a preliminary solder layer on the at least aportion of the top surface of each of the plurality of pads and theportion of the passivation layer exposed by the mask pattern.

According to an example embodiment of the inventive concepts, asemiconductor chip including a pad region and a cell region includes aplurality of through silicon via (TSV) structures in the pad region, aplurality of uppermost wirings in the cell region, the plurality ofuppermost wirings forming part of circuit configurations of thesemiconductor chip, adjacent ones of the plurality of uppermost wiringsbeing spaced apart by a same distance, each of the plurality ofuppermost wirings having a same width, the plurality of uppermostwirings extending in parallel along one direction, a passivation layerin the cell region and the pad region, the passivation layer covering atleast a top surface of the plurality of uppermost wirings in the cellregion, a top surface of the passivation layer in the cell region havinga wave shape, and a plurality of thermal bumps on the passivation layer,the plurality of thermal bumps electrically insulated from the pluralityof uppermost wirings, a plurality of pads on the semiconductor devicelayer in the pad region.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments of the inventive concepts will be more clearlyunderstood from the following detailed description taken in conjunctionwith the accompanying drawings in which:

FIG. 1 is a layout schematically illustrating a configuration of asemiconductor chip according to an example embodiment;

FIG. 2 is a plan view schematically illustrating a configuration of amain part of a semiconductor chip according to an example embodiment;

FIG. 3 is a cross-sectional view schematically illustrating aconfiguration of a main part of a semiconductor chip according to anexample embodiment;

FIG. 4 is a plan view schematically illustrating a configuration of amain part of a semiconductor chip according to an example embodiment;

FIG. 5 is a plan view schematically illustrating a configuration of amain part of a semiconductor chip according to an example embodiment;

FIG. 6 is a conceptual view for describing a connection relationship oftwo set of wirings included in a semiconductor chip according to anexample embodiment;

FIG. 7 is a cross-sectional view schematically illustrating aconfiguration of a semiconductor chip according to an exampleembodiment;

FIG. 8 is a cross-sectional view schematically illustrating aconfiguration of a semiconductor chip according to an exampleembodiment;

FIG. 9 is a cross-sectional view schematically illustrating aconfiguration of a semiconductor chip according to an exampleembodiment;

FIGS. 10, 11, 12, 13, 14, and 15 are cross-sectional views illustratinga method of manufacturing a semiconductor chip according to an exampleembodiment;

FIG. 16 is a cross-sectional view illustrating a semiconductor packageincluding a semiconductor chip according to an example embodiment;

FIG. 17 is a cross-sectional view illustrating a semiconductor packageincluding a semiconductor chip according to an example embodiment;

FIG. 18 is a cross-sectional view illustrating a semiconductor packageincluding a semiconductor chip according to an example embodiment;

FIG. 19 is a plan view illustrating a configuration of a main part of asemiconductor module according to an example embodiment;

FIG. 20 is a diagram schematically illustrating a configuration of asemiconductor package according to an example embodiment; and

FIG. 21 is a diagram illustrating an electronic system including asemiconductor package according to an example embodiment.

DETAILED DESCRIPTION

FIG. 1 is a layout schematically illustrating a configuration of asemiconductor chip 10 according to an example embodiment.

Referring to FIG. 1, the semiconductor chip 10 may include a pad regionPR and a cell region CR. The semiconductor chip 10 may be, for example,a memory semiconductor chip. The memory semiconductor chip may be, forexample, a volatile memory semiconductor chip such as a dynamic randomaccess memory (DRAM), a static random access memory (SRAM), or the likeor a non-volatile memory semiconductor chip such as a phase-changerandom access memory (PRAM), a magnetoresistive random access memory(MRAM), a ferroelectric random access memory (FRAM), a resistive randomaccess memory (RRAM), or the like. In some example embodiments, thesemiconductor chip 10 may be a high bandwidth memory (HBM) DRAM.

When the semiconductor chip 10 is a memory semiconductor chip, aplurality of memory cells (not shown) may be provided in the cell regionCR which is a separate region different from the pad region PR.

A plurality of through electrodes (not shown) electrically connected toa bonding pad PAD may be disposed in the pad region PR. The pad regionPR may have a certain width and may extend between opposite both edgesof the semiconductor chip 10. For example, a width of the pad region PRmay be about hundreds μm. The pad region PR may be disposed along acenter axis of the semiconductor chip 10 in a long-axis direction, butis not limited thereto. In some example embodiments, the pad region PRmay be disposed along a center axis of the semiconductor chip 10 in ashort-axis direction or may be disposed along an edge of thesemiconductor chip 10.

A plurality of the bonding pads PAD may be arranged to form a matrixhaving columns and rows in the pad region PR. For example, hundreds tothousands of the bonding pads PAD may be arranged in the form of amatrix in the pad region PR. In the pad region PR, the plurality ofbonding pads PAD may be arranged at a certain pitch of tens μm in acolumn direction and at a certain pitch of tens μm in a row direction toform the matrix. For example, the plurality of bonding pads PAD may bearranged at a pitch of 40 μm to 50 μm in the column direction or the rowdirection to form the matrix. For example, the plurality of bonding padsPAD may have a tetragonal shape having a side length of 20 μm to 40 μm.

The plurality of bonding pads PAD provided in the pad region PR may forma matrix in one rectangle illustrated in the pad region PR in FIG. 1,but is not limited thereto. For example, the plurality of bonding padsPAD provided in the pad region PR may form a matrix in an even number oftetragons (for example, two tetragons or four or more tetragons), whichare spaced apart from each other.

In some example embodiments, arrangement of the pad region PR of thesemiconductor chip 10 and/or arrangement of the plurality of bondingpads PAD in the pad region PR may be defined based on, for example,standard such as JEDEC Standard.

FIG. 2 is a plan view schematically illustrating a configuration of amain part of a semiconductor chip 10 according to an example embodiment.

Referring to FIG. 2, the semiconductor chip 10 may include a pad regionPR and a cell region CR. A plurality of bonding pads PAD and a signalbump BP-S disposed on each of the plurality of bonding pads PAD may beprovided in the pad region PR. The signal bump BP-S may be supplied withat least one of a control signal, a power signal, or a ground signal foroperating the semiconductor chip 10 from the outside. The signal bumpBP-S may be supplied with a data signal, which is to be stored in thesemiconductor chip 10, from the outside. The signal bump BP-S may supplydata stored in the semiconductor chip 10 to the outside.

An uppermost wiring M3 and a plurality of thermal bumps BP-T disposed onthe uppermost wiring M3 may be provided in the cell region CR. Thethermal bumps BP-T may dissipate heat, which is generated duringoperation of the semiconductor chip 10, to the outside. The thermalbumps BP-T may not be electrically connected to a plurality ofindividual devices which are provided in the semiconductor chip 10 andconfigure a semiconductor device. In some example embodiments, thethermal bumps BP-T may thermally contact elements provided in thesemiconductor chip 10 in order to be used as a heat transfer anddissipation path.

In the present disclosure, an uppermost wiring refers to an uppermostwiring, which forms part of circuit configurations of the semiconductorchip 10 among wirings in a plurality of levels. For example, aredistribution wiring, which is formed on the semiconductor chip 10 foradjusting the arrangement and pitch of the signal bumps BP-S, is notsubstantially applied to the circuit configuration of the semiconductorchip 10. Thus, the redistribution wiring does not correspond to theuppermost wiring as defined herein.

In the present disclosure, a semiconductor chip including three layersof wirings is described, but is not limited thereto. In other exampleembodiments, a semiconductor device may include two, or four or more,layers of wirings.

In the present disclosure, a case in which a redistribution wiring isnot provided is described, but example embodiments are not limitedthereto. For example, when a redistribution wiring is not formed in thesemiconductor chip 10, the plurality of bonding pads PAD and theuppermost wiring M3 may be formed together and may be provided on thesame layer. For example, when a redistribution wiring is formed in thesemiconductor chip 10, the redistribution wiring may be provided onanother layer, which is separate from a layer on which the plurality ofbonding pads PAD and the uppermost wiring M3 are provided. In such case,the signal bump BP-S may be provided on a connection pad which isconnected to the redistribution wiring through the plurality of bondingpads PAD. In some example embodiments, an area of the plurality ofbonding pads PAD may not be wider than that of the signal bump BP-S asillustrated in FIG. 2.

The plurality of bonding pads PAD may be electrically connected to aplurality of the signal bumps BP-S, respectively. The plurality ofsignal bumps BP-S each may have a horizontal width equal to a firstdistance D1. The plurality of signal bumps BP-S may be arranged at afirst pitch P1. The plurality of bonding pads PAD, which correspond tothe plurality of signal bumps BP-S respectively, each may have atetragonal shape which has a side length having a value greater than thefirst distance D1. For example, when the first distance D1 is 25 μm, aside length of each of the plurality of bonding pads PAD may be 30 μm.

The uppermost wiring M3 may be electrically insulated from the pluralityof thermal bumps BP-T. For example, a passivation layer (150 of FIG. 3)may be disposed between the uppermost wiring M3 and the plurality ofthermal bumps BP-T to electrically insulate the uppermost wiring M3 fromthe plurality of thermal bumps BP-T.

A plurality of the uppermost wirings M3 may extend in parallel along onedirection (e.g., a horizontal direction of FIG. 2). The plurality ofuppermost wirings M3 may have the same width, namely, a first width W1,and may be arranged at an equal distance. The plurality of uppermostwirings M3 may be arranged at a pitch equal to a second width W2.

The plurality of thermal bumps BP-T each may have a horizontal widthequal to a second distance D2. The plurality of thermal bumps BP-T maybe arranged at a second pitch P2. The second distance D2 may have avalue equal to or greater than that of the first distance D1. The secondpitch P2 may have a value equal to or greater than that of the firstpitch P1. In some example embodiments, the second distance D2 and thefirst distance D1 may have the same value, and the second pitch P2 mayhave a value which is approximately two times value of the first pitchP1.

The plurality of uppermost wirings M3 each may have the first width W1and the plurality of uppermost wirings M3 may have a pitch equal to thesecond width W2 in the cell region CR and may be arranged in parallelalong the one direction (e.g., the horizontal direction of FIG. 2). Insome example embodiments, the plurality of uppermost wirings M3 each mayhave the first width W1, the plurality of uppermost wirings M3 may havea pitch equal to the second width W2, the plurality of uppermost wiringsM3 may be provided under the plurality of thermal bumps BP-T and/or atpositions adjacent to the plurality of thermal bumps BP-T, and theplurality of thermal bumps BP-T may extend in parallel along the onedirection (e.g., the horizontal direction of FIG. 2). The plurality ofuppermost wirings M3 may have different widths, different pitches,and/or different extension directions at positions, at which theplurality of thermal bumps BP-T are not provided, in the cell region CR.

Some of the plurality of uppermost wirings M3 may extend from the cellregion CR to the pad region PR and may be spaced apart from and extendbetween adjacent bonding pads PAD.

Some of the plurality of uppermost wirings M3 may extend from the cellregion CR to the pad region PR. Some of the plurality of uppermostwirings M3 may extend from the cell region CR to the pad region PR andmay be connected to a corresponding bonding pad PAD. Wirings connectedto a corresponding bonding pad PAD among the plurality of uppermostwirings M3 may be referred to as connection wirings M3-1 and M3-2.

Some of the plurality of bonding pads PAD may be connected to oneuppermost wiring M3 or a plurality of uppermost wiring M3. A second padPAD-2 of the plurality of bonding pads PAD may be connected to moreuppermost wirings M3 than the number of uppermost wirings M3 connectedto a first pad PAD-1. For example, the first pad PAD-1 may be connectedto one first connection wiring M3-1, and the second pad PAD-2 may beconnected to a second connection wiring M3-2. The second connectionwiring M3-2 may include two or more uppermost wirings M3. That is, twoor more adjacent uppermost wirings M3 (i.e., second connection wiringsM3-2) connected to the second pad PAD-2 may be electrically connected toeach other to function as one wiring. At least some of the secondconnection wirings M3-2 which are electrically connected to each otherto function as one wiring may extend under the thermal bump BP-T.

Some of the plurality of bonding pads PAD may not be connected to theuppermost wirings M3.

FIG. 3 is a cross-sectional view schematically illustrating aconfiguration of a main part of the semiconductor chip 10 according toan example embodiment.

Referring to FIG. 3, the semiconductor chip 10 may include a pad regionPR and a cell region CR. The semiconductor chip 10 may include asemiconductor device layer 100 and a plurality of uppermost wirings M3disposed on the semiconductor device layer 100. The pad region PR of thesemiconductor chip 10 may further include a bonding pad PAD disposed onthe semiconductor device layer 100.

In the present disclosure, the semiconductor device layer 100 mayinclude a plurality of individual devices which are provided under theplurality of uppermost wirings M3 in the semiconductor chip 10 andconfigure a semiconductor device on a semiconductor substrate, aplurality of elements which electrically connect the plurality ofindividual devices, and an interlayer insulation layer and aninter-wiring insulation layer which are disposed therebetween. Thesemiconductor device layer 100 may further include a TSV structureelectrically connected to the bonding pad PAD. Elements of thesemiconductor device layer 100 will be described with reference to FIGS.7 to 9.

The semiconductor chip 10 may be, for example, a memory semiconductorchip. In some example embodiments, the semiconductor chip 10 may be anHBM DRAM having the TSV structure.

The bonding pad PAD and the plurality of uppermost wirings M3 may beformed together and may by provided on the same layer. In some exampleembodiments, the bonding pad PAD and the plurality of uppermost wiringsM3 may be formed to have a thickness of hundreds nm to several μm.

The plurality of the uppermost wirings M3 may have the same width,namely, a first width W1, and may be arranged at an equal distance. Thefirst width W1 may be hundreds nm. In some example embodiments, thefirst width W1 may be 200 nm to 500 nm. The plurality of the uppermostwirings M3 may be arranged at a pitch equal to a second width W2. Thesecond width W2 may have a value greater than the first width W1, and insome example embodiments, the second width W2 may be equal to or lessthan 1 μm.

A passivation layer 150 may be formed on the bonding pad PAD and theplurality of uppermost wiring M3. The passivation layer 150 may includea bump hole 150H that exposes at least a portion of a top of the bondingpad PAD. The passivation layer 150 may be formed of, for example, aninorganic insulating material. In some example embodiments, thepassivation layer 150 may be formed of silicon oxide.

The passivation layer 150 may have a thickness of hundreds nm to severalan. A shape of each of the plurality of uppermost wirings M3 may bepartially transferred to a top of the passivation layer 150, and the topof the passivation layer 150 may have a first step height R1. In someexample embodiments, the top of the passivation layer 150 may have aconcave-convex shape which is consistently repeated like a wave shapedsurface, and the first step height R1 may be a height between a top anda bottom of a wave shape of the top of the passivation layer 150.

The first step height R1 may have a value less than a thickness of eachof the plurality of the uppermost wirings M3. The first step height R1may have a value equal to or less than 100 nm.

A signal bump BP-S may be provided on the bonding pad PAD in the padregion PR. The signal bump BP-S may be supplied with at least one of acontrol signal, a power signal, or a ground signal for operating thesemiconductor chip 10 from the outside. The signal bump BP-S may besupplied with a data signal, which is to be stored in the semiconductorchip 10, from the outside. The signal bump BP-S may supply data storedin the semiconductor chip 10 to the outside. The signal bump BP-S may beelectrically connected to the bonding pad PAD through a bump hole 150H.A diameter of the bump hole 150H may have a value less than a width ofthe signal bump BP-S and a width of the bonding pad PAD. Therefore, aportion of a bottom of the signal bump BP-S may contact the bonding padPAD, and other a portion of the bottom may contact the passivation layer150.

A thermal bumps BP-T which is disposed on the uppermost wirings M3 withthe passivation layer 150 thereon and therebetween may be provided inthe cell region CR. The thermal bump BP-T may dissipate heat, generatedduring operation of the semiconductor chip 10, to the outside. Thethermal bump BP-T may be electrically insulated from the uppermostwiring M3 by the passivation layer 150. The thermal bump BP-T may not beconnected to a plurality of individual devices, which are provided onthe semiconductor device layer 100 of the semiconductor chip 10 andconfigure a semiconductor device. In some example embodiments, thethermal bump BP-T may thermally contact an element provided in thesemiconductor device layer 100 in order to be used as a heat transferand dissipation path.

The signal bump BP-S and the thermal bump BP-T may each include a pillarlayer 162 and a solder layer 164 disposed on the pillar layer 162. Thepillar layer 162 may be formed of, for example, copper (Cu), nickel(Ni), gold (Au), and/or the like. The pillar layer 162, for example, maybe formed of one metal selected from among Cu, Ni, and Au or an alloythereof or may have a multilayer structure including a plurality ofmetals selected from among Cu, Ni, and Au. The pillar layer 162 may beformed through an electroplating process.

The solder layer 164 may include an alloy of tin (Sn) and silver (Ag),and depending on the case, copper (Cu), palladium (Pd), bismuth (Bi),antimony (Sb), and/or the like may be added into the solder layer 164. Apreliminary solder layer may be formed, and then, the solder layer 164may be formed to have a convex shape through thermal treatment. Thepreliminary solder layer may be formed through an electroplatingprocess. In some example embodiments, the pillar layer 162 and thepreliminary solder layer each may be formed through a separateelectroplating process.

The signal bump BP-S and the thermal bump BP-T may be formed together,and an upper end of the signal bump BP-S and an upper end of the thermalbump BP-T may have the same level.

A bottom of the thermal bump BP-T, namely, a bottom of a pillar layerconfiguring the thermal bump BP-T, may contact the top of thepassivation layer 150. Therefore, the bottom of the thermal bump BP-Tmay have a concave-convex shape such as a wave shaped surfacecorresponding to the top of the passivation layer 150.

In a photolithography process of forming the signal bump BP-S and thethermal bump BP-T, reflection may occur in photo exposure due to a stepheight caused by the uppermost wirings M3 and/or a shape of the top ofthe passivation layer in the cell region CR. Here, when at least some ofthe plurality of uppermost wirings M3 have different widths or arearranged at different intervals, diffuse reflection occurs in the top ofthe passivation layer 150, and for this reason, a shape of the thermalbump BP-T is abnormally formed. When the shape of the thermal bump BP-Tis abnormally formed due to the diffuse reflection, a height differenceoccurs between the signal bump BP-S and the thermal bump BP-T. When theheight difference occurs between the signal bump BP-S and the thermalbump BP-T, a contact defect occurs in at least a portion of the signalbump BP-S and the thermal bump BP-T. Thus, the semiconductor chip 10cannot normally operate, or heat generated from the semiconductor chip10 may not be normally dissipated.

For example, when a protection layer including an organic insulatingmaterial such as photosensitive polyimide (PSPI) or the like forcounteracting a step height of the top of the passivation layer 150 isfurther formed on the passivation layer 150 in order to prevent diffusereflection from occurring in photo exposure, a thickness of thesemiconductor chip 10 increases, and a warpage may occur in thesemiconductor chip 10 due to a thermal expansion coefficient differencebetween the protection layer and the semiconductor device layer 100.Even in this case, a contact defect may occur in at least some of thesignal bumps BP-S and the thermal bumps BP-T, and thus, thesemiconductor chip 10 may not normally operate, or heat generated fromthe semiconductor chip 10 may not be normally dissipated.

However, in the semiconductor chip 10 according to an exampleembodiment, the plurality of uppermost wirings M3 may have the samewidth and may be arranged at an equal distance in the cell region CR,and thus, the top of the passivation layer 150 may have a surface shapeof a wave which is consistently repeated, thereby mitigated orpreventing diffuse reflection from occurring in photo exposure.Therefore, a shape of the thermal bump BP-T is normally formed, and awarpage may be mitigated or prevented from occurring in thesemiconductor chip 10. Accordingly, an upper end of the signal bump BP-Sand an upper end of the thermal bump BP-T may have the same level. Thus,a contact defect may be mitigated or prevented from occurring in thesignal bump BP-S and the thermal bump BP-T, thereby securing reliabilityof the semiconductor chip 10 and/or efficiently dissipating heatgenerated from the semiconductor chip 10.

FIG. 4 is a plan view schematically illustrating a configuration of amain part of a semiconductor chip 10 a according to an exampleembodiment. In providing description with reference to FIG. 4, detailswhich are similar to or the same as the details described above withreference to FIGS. 1 to 3 may be omitted, and like reference numeralsrefer to like elements.

Referring to FIG. 4, the semiconductor chip 10 a may include a padregion PR and a cell region CR. A plurality of bonding pads PAD and asignal bump BP-S disposed on the plurality of bonding pads PAD may beprovided in the pad region PR. An uppermost wiring M3 and a plurality ofthermal bumps BP-Ta disposed on the uppermost wiring M3 may be providedin the cell region CR.

The plurality of bonding pads PAD may be electrically connected to aplurality of the signal bumps BP-S, respectively. The plurality ofsignal bumps BP-S each may have a horizontal width equal to a firstdistance D1. The plurality of signal bumps BP-S may be arranged at afirst pitch P1. The plurality of bonding pads PAD, which correspond tothe plurality of signal bumps BP-S respectively, each may have atetragonal shape which has a side length having a value greater than thefirst distance D1.

The uppermost wiring M3 may be electrically insulated from the pluralityof thermal bumps BP-Ta. For example, a passivation layer (150 of FIG. 3)may be disposed between the uppermost wiring M3 and the plurality ofthermal bumps BP-Ta to electrically insulate the uppermost wiring M3from the plurality of thermal bumps BP-Ta.

A plurality of the uppermost wirings M3 may extend in parallel along onedirection (e.g., a horizontal direction of FIG. 4). The plurality ofuppermost wirings M3 may have the same width, namely, a first width W1,and may be arranged at an equal distance. The plurality of uppermostwirings M3 may be arranged at a pitch equal to a second width W2.

The plurality of thermal bumps BP-Ta each may have a width equal to asecond distance D2 a. The plurality of thermal bumps BP-Ta may bearranged at a second pitch P2 a. The second distance D2 a may have avalue equal to or greater than that of the first distance D1. The secondpitch P2 a may have a value equal to or greater than that of the firstpitch P1. In some example embodiments, the second distance D2 a and thefirst distance D1 may have the same value, and the second pitch P2 mayhave a value which is the same as that of the first pitch P1.

The plurality of uppermost wirings M3 each may have the same first widthW1, and the plurality of uppermost wirings M3 may have a pitch equal tothe second width W2 in the cell region CR and may be arranged inparallel along the one direction (the horizontal direction of FIG. 4).In some example embodiments, the plurality of uppermost wirings M3 eachmay have the first width W1, the plurality of uppermost wirings M3 mayhave a pitch equal to the second width W2, the plurality of uppermostwirings M3 may be provided under the plurality of thermal bumps BP-Taand/or at positions adjacent to the plurality of thermal bumps BP-T, andthe plurality of thermal bumps BP-T may extend in parallel along the onedirection (the horizontal direction of FIG. 4). The plurality ofuppermost wirings M3 may have different widths, different pitches,and/or different extension directions at positions, at which theplurality of thermal bumps BP-Ta are not provided, in the cell regionCR.

Some of the plurality of uppermost wirings M3 may extend from the cellregion CR to the pad region PR and may be spaced apart from and extendbetween adjacent bonding pads PAD.

Some of the plurality of uppermost wirings M3 may extend from the cellregion CR to the pad region PR. Some of the plurality of uppermostwirings M3 may extend from the cell region CR to the pad region PR andmay be connected to a corresponding bonding pad PAD. Wirings connectedto a corresponding bonding pad PAD among the plurality of uppermostwirings M3 may be referred to as connection wirings M3-1 and M3-2.

Some of the plurality of bonding pads PAD may be connected to oneuppermost wiring M3 or a plurality of uppermost wiring M3. A first padPAD-1 of the plurality of bonding pads PAD may be connected to moreuppermost wirings M3 than the number of uppermost wirings M3 connectedto a second pad PAD-2. Two or more adjacent uppermost wirings M3 (e.g.,second connection wirings M3-2) connected to the second pad PAD-2 may beelectrically connected to each other to function as one wiring. At leastsome of the second connection wirings M3-2 which are electricallyconnected to each other to function as one wiring may extend under thethermal bump BP-T.

Some of the plurality of bonding pads PAD may not be connected to theuppermost wirings M3.

FIG. 5 is a plan view schematically illustrating a configuration of amain part of a semiconductor chip 10 b according to an exampleembodiment. In providing description with reference to FIG. 5, detailswhich are similar to or the same as the details described above withreference to FIGS. 1 to 4 may be omitted, and like reference numeralsrefer to like elements.

Referring to FIG. 5, the semiconductor chip 10 b may include a padregion PR and a cell region CR. A plurality of bonding pads PAD and asignal bump BP-S disposed on each of the plurality of bonding pads PADmay be provided in the pad region PR. Uppermost wirings M3 and aplurality of thermal bumps BP-Tb disposed on the uppermost wirings M3may be provided in the cell region CR.

The plurality of bonding pads PAD may be electrically connected to aplurality of the signal bumps BP-S, respectively. The plurality ofsignal bumps BP-S each may have a horizontal width equal to a firstdistance D1. The plurality of signal bumps BP-S may be arranged at afirst pitch P1. The plurality of bonding pads PAD, which correspond tothe plurality of signal bumps BP-S respectively, each may have atetragonal shape which has a side length having a value greater than thefirst distance D1.

The uppermost wiring M3 may be electrically insulated from the pluralityof thermal bumps BP-Tb. For example, a passivation layer (150 of FIG. 3)may be disposed between the uppermost wiring M3 and the plurality ofthermal bumps BP-Ta to electrically insulate the uppermost wiring M3from the plurality of thermal bumps BP-Thb.

A plurality of the uppermost wirings M3 may extend in parallel along onedirection (a horizontal direction of FIG. 5). The plurality of uppermostwirings M3 may have the same width, namely, a first width W1, and may bearranged at an equal distance. The plurality of uppermost wirings M3 maybe arranged at a pitch equal to a second width W2.

The plurality of thermal bumps BP-Tb may each have a width equal to asecond distance D2 b. The plurality of thermal bumps BP-Tb may bearranged at a second pitch P2 b. The second distance D2 b may have avalue equal to or greater than that of the first distance D1. The secondpitch P2 b may have a value equal to or greater than that of the firstpitch P1. In some example embodiments, the second distance D2 b may havea value which is approximately two times value of the first distance D1,and the second pitch P2 may have a value which is approximately twotimes value of the first pitch P1.

The plurality of uppermost wirings M3 each may have a first width W1,and the plurality of uppermost wirings M3 may have a pitch equal to thesecond width W2 in the cell region CR and may be arranged in parallelalong the one direction (the horizontal direction of FIG. 5). In someexample embodiments, the plurality of uppermost wirings M3 each may havethe first width W1, the plurality of uppermost wirings M3 may have apitch equal to the second width W2, the plurality of uppermost wiringsM3 may be provided under the plurality of thermal bumps BP-Tb and/orpositions adjacent to the plurality of thermal bumps BP-Tb, and theplurality of thermal bumps BP-Tb may extend in parallel along the onedirection (the horizontal direction of FIG. 5). The plurality ofuppermost wirings M3 may have different widths, different pitches,and/or different extension directions at positions, at which theplurality of thermal bumps BP-Tb are not provided, in the cell regionCR.

Some of the plurality of uppermost wirings M3 may extend from the cellregion CR to the pad region PR and may be spaced apart from and extendbetween adjacent bonding pads PAD.

Some of the plurality of uppermost wirings M3 may extend from the cellregion CR to the pad region PR. Some of the plurality of uppermostwirings M3 may extend from the cell region CR to the pad region PR andmay be connected to a corresponding bonding pad PAD. Wirings connectedto a corresponding bonding pad PAD among the plurality of uppermostwirings M3 may be referred to as connection wirings M3-1 and M3-2.

Some of the plurality of bonding pads PAD may be connected to oneuppermost wiring M3 or a plurality of uppermost wiring M3. A first padPAD-1 of the plurality of bonding pads PAD may be connected to moreuppermost wirings M3 than the number of uppermost wirings M3 connectedto a second pad PAD-2. Two or more adjacent uppermost wirings M3 (e.g.,second connection wirings M3-2) connected to the second pad PAD-2 may beelectrically connected to each other to function as one wiring. At leastsome of the second connection wirings M3-2 which are electricallyconnected to each other to function as one wiring may extend under thethermal bump BP-T.

Some of the plurality of bonding pads PAD may not be connected to theuppermost wirings M3.

FIG. 6 is a conceptual view for describing a connection relationship oftwo set of wirings included in a semiconductor chip according to anexample embodiment.

Referring to FIG. 6, a plurality of uppermost wirings M3 may extend inparallel along one direction (a horizontal direction of FIG. 6). Theplurality of uppermost wirings M3 may have the same width, namely, afirst width W1, and may be arranged at an equal distance. The pluralityof uppermost wirings M3 may be arranged at a pitch equal to a secondwidth W2.

A plurality of lower wirings M2 may extend in parallel along onedirection (a perpendicular direction of FIG. 6) under the plurality ofuppermost wirings M3. At least some of the plurality of lower wirings M2may have different widths.

Some of the plurality of uppermost wirings M3 each may be electricallyconnected to a corresponding one of the lower wiring M2 through a wiringvia MV, which is provided between a corresponding one of the uppermostwiring M3 and a corresponding one of the lower wiring M2. Wirings fromamong the plurality of uppermost wirings M3 that are connected tocorresponding ones of the lower wiring M2 may be referred to asconnection wirings M3-1 a and M3-2 a.

Some of the plurality of lower wirings M2 may be connected tocorresponding one or more of the uppermost wirings M3. A second lowerwiring M2-2 of the plurality of lower wirings M2 may be connected to anumber of the uppermost wirings M3 greater than the number of uppermostwirings M3 connected to a first lower wiring M2-1. For example, thefirst lower wiring M2-1 may be connected to one first connection wiringM3-1 a, and the second lower wiring M2-2 may be connected to a secondconnection wiring M3-2 a. The second connection wiring M3-2 a may beconfigured with two or more uppermost wirings M3. That is, two or moreadjacent ones of the uppermost wirings M3 (e.g., second connectionwirings M3-2 a) connected to the second lower wiring M2-2 may beelectrically connected to each other to function as one wiring. At leastsome of the second connection wirings M3-2 a which are electricallyconnected to each other to function as one wiring may extend under thethermal bump (BP-T, BP-Ta and BP-Tb of FIGS. 3 to 5).

Some of the plurality of lower wirings M2 may not be connected to theuppermost wirings M3.

Referring to FIGS. 2, 4, 5 and 6, some of the plurality of uppermostwirings M3 may be electrically connected to one bonding pad PAD or twoor more bonding pads PAD or may be electrically connected to one of thelower end wirings M2 or two or more of the lower end wirings M2. In someexample embodiments, some of the plurality of uppermost wirings M3 maybe electrically connected to one, two, or more of the bonding pads PAD,or the other some of the plurality of uppermost wirings M3 may beelectrically connected to one of the lower wirings M2 or two or more ofthe lower wirings M2.

Some of the plurality of uppermost wirings M3 may be dummy wirings whichare not electrically connected to the bonding pad PAD and the lowerwiring M2.

In some example embodiments, the plurality of lower wirings M2 may havethe same width, may be arranged at an equal distance, and may extend ina state of having the same pitch, and similarly to the plurality ofuppermost wirings M3, two or more of the plurality of lower wirings M2may be electrically connected to each other another to function as onewiring.

Referring to FIGS. 2 and 6, the plurality of the uppermost wirings M3may extend in parallel along one direction (the horizontal direction ofFIGS. 2 to 6). The plurality of uppermost wirings M3 may have the samewidth, namely, a first width W1, and may be arranged at an equaldistance. The plurality of uppermost wirings M3 may be arranged at apitch equal to a second width W2.

In some example embodiments, some adjacent ones of the uppermost wiringsM3 may be electrically connected to one bonding pad PAD and/or one lowerwiring M2 to function as one wiring. The some adjacent ones of theuppermost wirings M3, which are electrically connected to each other tofunction as one wiring, may extend under the thermal bump BP-T, BP-Ta orBP-Tb. In some example embodiments, the number of uppermost wirings M3electrically connected to one bonding pad PAD and/or one lower wiring M2may be changed. The number of uppermost wirings M3 electricallyconnected to one bonding pad PAD and/or one lower wiring M2 may be two,three or more. Some of the plurality of uppermost wirings M3 may bedummy wirings which are electrically insulated from one bonding pad PADand/or one lower wiring M2.

For example, in a first set of uppermost wirings M3, which is used fortransferring a power signal and/or a ground signal, among the pluralityof uppermost wirings M3, the first set may include uppermost wirings M3in a relatively large number, and the uppermost wirings M3 included inthe first set may be electrically connected to one bonding pad PADand/or one lower wiring M2 to function as one wiring. For example, in asecond set of uppermost wirings M3, which is used for transferring acontrol signal and/or a data signal, among the plurality of uppermostwirings M3, the second set may include uppermost wirings M3 in arelatively small number, and the uppermost wiring M3 included in thesecond set may be electrically connected to one bonding pad PAD and/orone lower wiring M2 to function as one wiring.

That is, in the semiconductor chip 10, 10 a or 10 b according to anexample embodiment, the plurality of uppermost wirings M3 each have thesame width W1, and the plurality of uppermost wirings are arranged tohave a pitch of the second widths W2. Further, electricalcharacteristics desired for various kinds of signals may be provided byvariously changing the number of uppermost wirings M3 electricallyconnected to one bonding pad PAD and/or one lower wiring M2.

FIG. 7 is a cross-sectional view schematically illustrating aconfiguration of a semiconductor chip 10-1 according to an exampleembodiment.

Referring to FIG. 7, the semiconductor chip 10-1 may include a padregion PR and a device region (or alternatively, cell region) CR. Thesemiconductor chip 10-1 may include a semiconductor substrate 120, afront-end-of-line (FEOL) structure 130, and a back-end-of-line (BEOL)structure 140.

A TSV structure 30 disposed in the pad region PR of the semiconductorchip 10-1 may be provided in a via hole 22 passing through the FEOL 130and the semiconductor substrate 120. A via insulation layer 40 may bedisposed between the semiconductor substrate 120 and the TSV structure30 and between the FEOL structure 130 and the TSV structure 30.

The TSV structure 30 may include a conductive plug 32, which passesthrough the semiconductor substrate 120 and the FEOL structure 130, anda conductive barrier layer 34 surrounding the conductive plug 32. Theconductive plug 32 may include, for example, Cu or tungsten (W). Forexample, the conductive plug 32 may include Cu, CuSn, CuMg, CuNi, CuZn,CuPd, CuAu, CuRe, CuW, W, or a W alloy, but is not limited thereto. Forexample, the conductive plug 32 may include one or more of aluminum(Al), gold (Au), beryllium (Be), bismuth (Bi), cobalt (Co), Cu, hafnium(Hf), indium (In), manganese (Mn), molybdenum (Mo), Ni, plumbum (Pb),palladium (Pd), platinum (Pt), rhodium (Rh), rhenium (Re), ruthenium(Ru), tantalum (Ta), tellurium (Te), titanium (Ti), W, zinc (Zn), andzirconium (Zr), and may include a stacked structures of one or morelayers. The conductive barrier layer 34 may include at least onematerial selected from among W, WN, WC, Ti, TiN, Ta, TaN, Ru, Co, Mn,WN, Ni, and NiB and may be formed of a single layer or a multilayer.However, a material of the TSV structure 30 is not limited thereto. Theconductive plug 32 and the conductive barrier layer 34 may be formed bya physical vapor deposition (PVD) process or a chemical vapor deposition(CVD) process, but is not limited thereto.

The via insulation layer 40 may include oxide, nitride, carbide, apolymer, or a combination thereof. In some example embodiments, the CVDprocess may be used for forming the via insulation layer 40. The viainsulation layer 40 may be formed of high aspect ratio process (HARP)oxide based on ozone/tetra-ethyl ortho-silicate (O3/TEOS) formed by asub-atmospheric CVD process.

The semiconductor substrate 120 may be a semiconductor wafer. Thesemiconductor substrate 120 may include, for example, silicon (Si). Thesemiconductor substrate 120 may include, for example, a semiconductorelement such as germanium (Ge) and/or the like, or a compoundsemiconductor such as silicon carbide (SiC), gallium arsenide (GaAs),indium arsenide (InAs), indium phosphide (InP), and/or the like. Thesemiconductor substrate 120 may have, for example, a silicon-oninsulator (SOI) structure. The semiconductor substrate 120 may include,for example, a buried oxide layer (BOX). The semiconductor substrate 120may include a conductive region, for example, a well doped withimpurities, or an impurity-doped structure. Also, the semiconductorsubstrate 120 may have various isolation structures such as a shallowtrench isolation (STI) structure.

The FEOL structure 130 may include a plurality of various kinds ofindividual devices 132 and an interlayer insulation layer 134. Theindividual devices 132 may be disposed in the device region CR.

The plurality of individual devices 132 may include variousmicroelectronic devices, for example, image sensors such as ametal-oxide-semiconductor field effect (MOSFET), system large scaleintegration (LSI), and a CMOS imaging sensor (CIS), amicro-electro-mechanical system (MEMS), an active device, and a passivedevice. The plurality of individual devices 132 may be electricallyconnected to the conductive region of the semiconductor substrate 120.Also, each of the plurality of individual devices 132 may beelectrically isolated from other individual devices adjacent thereto bythe interlayer insulation layer 134 and may be electrically connected tothe other individual devices by a conductive line and a contact plug. Insome example embodiments, the plurality of individual devices 132 mayconfigure a dynamic random access memory (DRAM) cell.

The BEOL structure 140 may include a multilayer wiring structure 146that includes a plurality of metal wiring layers 142 and a plurality ofvia plugs 144. A portion of the multilayer wiring structure 146 may beconnected to the TSV structure 30. The plurality of metal wiring layers142 may include a first wiring M1, a second wiring M2, and a thirdwiring M3. When the plurality of metal wiring layers 142 include threewiring layers respectively including the first to third wirings M1 toM3, the third wiring M3 configuring an uppermost wiring layer may bereferred to as an uppermost wiring M3, and a second wiring M2configuring a wiring layer just under the uppermost wiring M3 may bereferred to as a lower wiring M2.

The wiring via MV illustrated in FIG. 6 may correspond to the via plug144 that connects the second wiring M2 to the third wiring M3.

A portion of the multilayer wiring structure 146 may be connected to theplurality of individual devices 132 to configure a semiconductor device.The multilayer wiring structure 146, which connects the plurality ofindividual devices 132 included in the FEOL structure 130 and includesthe first to third wirings M1 to M3, may be provided in the deviceregion CR of the BEOL structure 140. A plurality of the third wirings M3may extend in parallel along one direction. The plurality of thirdwirings M3 may have the same width and may be arranged at an equaldistance. The plurality of third wirings M3 may be arranged at the samepitch.

A plurality of the multilayer wiring structures 146 included in the BEOLstructure 140 may be insulated from each other by an inter-wiringinsulation layer 148. The BEOL structure 140 may further include a sealring (not shown) for protecting the multilayer wiring structures 146 andother structures thereunder from an external shock or moisture.

In the present disclosure, elements under a top of the inter-wiringinsulation layer 148 may each be referred to as a semiconductor devicelayer (100-1, 100-2 of FIG. 8, and 100-3 of FIG. 9). A bonding pad PADand the third wiring M3 may be provided on the semiconductor devicelayer 100-1. In some example embodiments, the bonding pad PAD may be aportion of the third wiring M3.

A top 30T of the TSV structure 30 that is exposed by the semiconductorsubstrate 120 and the FEOL structure 130 may be connected to the metalwiring layer 142 of the multilayer wiring structure 146 included in theBEOL structure 140. In some example embodiments, the top 30T of the TSVstructure 30 may be connected to the first wiring M1.

At least a portion of the bonding pad PAD and a passivation layer 150which covers the third wiring M3 may be provided on the inter-wiringinsulation layer 148. The passivation layer 150 may be formed of aninorganic insulating material. In some example embodiments, thepassivation layer 150 may be formed of nitride. A hole 150H that exposesat least a portion of a top of the bonding pad PAD may be formed in thepassivation layer 150. The bonding pad PAD may be connected to a signalbump BP-P through the hole 150H.

In the device region CR, the passivation layer 150 may cover all a topand a side of the third wiring M3. In the device region CR, a top of thepassivation layer 150 may have a concave-convex shape that isconsistently repeated like a surface shape of a wave.

A thermal bump BP-T that is disposed on the passivation layer 150 andcovers the third wiring M3 may be provided in the device region CR. Aplurality of the thermal bumps BP-T may be electrically insulated fromthe third wiring M3 by the passivation layer 150.

The signal bump BP-P and the thermal bump BP-T each may include a pillarlayer 162 and a solder layer 164 disposed on the pillar layer 162.

A bottom 30B of the TSV structure 30 may be covered by a seed layer 64.A connection terminal 70 may be connected to the TSV structure 30through the seed layer 64. A top surface 70T and at least a portion of aside wall 70S of the connection terminal 70 may be covered by a metalcapping layer 80.

The connection terminal 70 is not limited to a shape illustrated in FIG.7. In other example embodiments, the connection terminal 70 may have theform of a conductive pad, a solder ball, a solder bump, or aredistribution wiring conductive layer.

A process of forming the BEOL structure 140, a process of forming theseed layer 64, and a process of forming the connection terminal 70 maybe performed after the TSV structure 30 is formed.

FIG. 8 is a cross-sectional view schematically illustrating aconfiguration of a semiconductor chip 10-2 according to an exampleembodiment. In providing description with reference to FIG. 8, detailswhich are similar to or the same as the details described above withreference to FIG. 7 may be omitted, and like reference numerals refer tolike elements.

Referring to FIG. 8, the semiconductor chip 10-2 may include a padregion PR and a device region CR. In the semiconductor chip 10-2, anFEOL structure 130 and a BEOL structure 140 may be formed, and then, aTSV structure 30 may be formed. Therefore, the TSV structure 30 may beformed to pass through a semiconductor substrate 120, an interlayerinsulation layer 134 of the FEOL structure 130, and an inter-wiringinsulation layer 148 of the BEOL structure 140. A conductive barrierlayer 34 of the TSV structure 30 may include a first outer wall portionsurrounded by the semiconductor substrate 120, a second outer wallportion surrounded by the interlayer insulation layer 134, and a thirdouter wall portion surrounded the inter-wiring insulation layer 148.

A bonding pad PAD may be provided between the TSV structure 30 and asignal bump BP-P on the BEOL structure 140, for electrically connectingthe TSV structure 30 to the signal bump BP-P.

A bottom 30B of the TSV structure 30 may be covered by a seed layer 64.A connection terminal 70 may be connected to the TSV structure 30through the seed layer 64. A portion of each of a top 70T and a sidewall 70S of the connection terminal 70 may be covered by a metal cappinglayer 80.

FIG. 9 is a cross-sectional view schematically illustrating aconfiguration of a semiconductor chip 10-3 according to an exampleembodiment. In providing description with reference to FIG. 9, detailswhich are similar to or the same as the details described above withreference to FIGS. 7 and 8 may be omitted, and like reference numeralsrefer to like elements.

Referring to FIG. 9, the semiconductor chip 10-3 may include a padregion PR and a device region CR. In the semiconductor chip 10-3, a TSVstructure 30 may extend to pass through a semiconductor substrate 120.The TSV structure 30 may be formed, and then, an FEOL structure 130 anda BEOL structure 140 may be formed on the TSV structure 30 and thesemiconductor substrate 120. The TSV structure 30 may be connected to amultilayer wiring structure 146 of the BEOL structure 140 through aconductive line 136 and a contact plug 138 which are included in theFEOL structure 130.

A bottom 30B of the TSV structure 30 may be covered by a seed layer 64.A connection terminal 70 may be connected to the TSV structure 30through the seed layer 64. A portion of each of a top 70T and a sidewall 70S of the connection terminal 70 may be covered by a metal cappinglayer 80.

In the semiconductor chips 10-1, 10-2 and 103 illustrated in FIGS. 7 to9, the TSV structure 30 and the signal bump BP-P are illustrated asbeing arranged in a vertical direction, but are not limited thereto. Inother example embodiments, the signal bump BP-P may be provided to beshifted in a horizontal direction.

FIGS. 10 to 15 are cross-sectional views illustrating a method ofmanufacturing a semiconductor chip according to an example embodiment.

Referring to FIG. 10, a semiconductor device layer 100 may be prepared.The semiconductor device layer 100, for example, may be formed like thesemiconductor devices 100-1, 100-2 and 100-3 of the semiconductor chips10-1, 10-2 and 103 illustrated in FIGS. 7 to 9.

A bonding pad PAD and an uppermost wiring M3 may be respectively formedin a pad region PR and a cell region CR on the semiconductor devicelayer 100. The bonding pad PAD and the uppermost wiring M3 may be formedtogether and may configure the same layer. In some example embodiments,the bonding pad PAD and the uppermost wiring M3 may be formed to have athickness of hundreds nm to several rm. The bonding pad PAD and theuppermost wiring M3 each may be formed of metal. For example, thebonding pad PAD and the uppermost wiring M3 may each be formed of one ormore of Al, Cu, Ta, Ti, or W.

Hundreds to thousands of the bonding pads PAD, as illustrated in FIG. 1,may be arranged to form a matrix in the pad region PR. The bonding padsPAD may be arranged at a certain pitch of tens μm in a column directionand at a certain pitch of tens μm in a row direction to form the matrix.For example, the bonding pads PAD may be arranged at a pitch of 40 μm to50 μm in the column direction or the row direction to form the matrix.For example, the bonding pads PAD may have a tetragonal shape having aside length of 20 μm to 40 μm.

A plurality of the uppermost wirings M3 may extend in parallel along onedirection in the cell region CR. The plurality of uppermost wirings M3may have the same width, namely, a first width W1, and may be arrangedat an equal distance. The plurality of uppermost wirings M3 may bearranged at a pitch equal to a second width W2.

For example, a wiring material layer may be formed, and then, thebonding pad PAD and the uppermost wiring M3 may be formed by patterningthe wiring material layer through a photo process and an etchingprocess.

Referring to FIG. 11, a preliminary passivation layer 150 a that coversthe bonding pad PAD and the uppermost wiring M3 may be formed. Thepreliminary passivation layer 150 a may be formed of an inorganicinsulating material. In some example embodiments, the preliminarypassivation layer 150 a may be formed of silicon nitride.

The preliminary passivation layer 150 a may have a thickness of hundredsnm to several μm. A shape of each of the plurality of uppermost wiringsM3 may be partially transferred to a top of the preliminary passivationlayer 150 a, and a top of the preliminary passivation layer 150 a mayhave a first step height R1. In some example embodiments, the top of thepreliminary passivation layer 150 a may have a concave-convex shapewhich is consistently repeated like a wave shaped surface, and the firststep height R1 may be a height between a top and a bottom of a waveshape of the top of preliminary passivation layer 150 a. The first stepheight R1 may have a value equal to or less than 100 nm.

Referring to FIGS. 11 and 12, a passivation layer 150 that includes abump hole 150H exposing at least a portion of a top of the bonding padPAD may be formed by removing a portion of the preliminary passivationlayer 150 a. The passivation layer 150 may entirely cover top and sidesurfaces of each of the plurality of the uppermost wirings M3 in thecell region CR.

Referring to FIG. 13, a mask pattern 200 may be formed on thepassivation layer 150.

The mask pattern 200 may expose the bump hole 150H and a portion of thepassivation layer 150 adjacent to the bump hole 150H in the pad regionPR. That is, the mask pattern 200 may expose at least a portion of thetop of the bonding pad PAD in the pad region PR. The mask pattern 200may expose a portion of the passivation layer 150 in the cell region CR.

A wavelength of light applied to a photolithography process of formingthe mask pattern 200 may have a value which is four or more timesgreater than the first step height R1 that is a step height of aconcave-convex shape of a top surface of the passivation layer 150, inthe cell region CR.

On the other hand, the top surface of the passivation layer 150 may beformed to have a step height having a value corresponding to one-fourthor less of the wavelength of the light applied to the photolithographyprocess of forming the mask pattern 200.

In some example embodiments, the photolithography process of forming themask pattern 200 may be performed by exposing light having a wavelengthof 435 nm (g-line) or 405 nm (h-line), and the first step height R1 mayhave a value equal to or less than 100 nm.

When the first step height R1 of the top of the passivation layer 150has a value corresponding to one-fourth or less of the wavelength of thelight applied to the photolithography process of forming the maskpattern 200, diffuse reflection is mitigated or prevented from occurringin photo exposure for forming the mask pattern 200. Accordingly, a shapeof the mask pattern 200 is mitigated or prevented from being abnormallyformed in the cell region CR. Here, the shape of the mask pattern 200being abnormal refers to situations, for example, that the width or areaof the passivation layer 150 exposed by the mask pattern 200 is formedto have an unintended shape, or a curve is formed on an inner wall ofthe mask pattern 200 exposing the passivation layer 150.

Therefore, when the first step height R1 of the top surface of thepassivation layer 150 has a value corresponding to one-fourth or less ofthe wavelength of the light applied to the photolithography process offorming the mask pattern 200, the width or area of the passivation layer150 exposed by the mask pattern 200 is formed to have an intended shape,and a curve is not formed on the inner wall of the mask pattern 200exposing the passivation layer 150.

Referring to FIG. 14, a pillar layer 162 and a preliminary solder layer164 a may be sequentially formed on a portion of the bonding pad PAD anda portion of the passivation layer 150 exposed by the mask pattern 200.

The pillar layer 162 may be formed of, for example, Cu, Ni, Au, and/orthe like. The pillar layer 162, for example, may be formed of one metalselected from among Cu, Ni, and Au or an alloy thereof or may have amultilayer structure including a plurality of metals selected from amongCu, Ni, and Au. The pillar layer 162 may be formed through anelectroplating process.

After the pillar layer 162 is formed, the preliminary solder layer 164 amay be formed on the pillar layer 162. The preliminary solder layer 164a may include an alloy of tin (Sn) and silver (Ag), and depending on thecase, Cu, palladium (Pd), bismuth (Bi), antimony (Sb), and/or the likemay be added into the preliminary solder layer 164 a. The preliminarysolder layer 164 a may be formed through an electroplating process.

Referring to FIGS. 14 and 15, the pillar layer 162 and the preliminarysolder layer 164 a may be formed, and then, the mask pattern 200 may beremoved. Subsequently, a semiconductor chip 10 including a solder layer164 having a convex shape as illustrated in FIG. 3 may be formed byreflowing the preliminary solder layer 164 a through thermal treatment.

Referring to FIGS. 3 and 10 to 15, in a method of manufacturing asemiconductor chip according to an example embodiment, a plurality ofuppermost wirings M3 which have the same width and are arranged at anequal distance may be formed in the cell region CR, thereby reducing thefirst step height R1 of the top of the passivation layer 150 coveringthe plurality of uppermost wirings M3. Therefore, diffuse reflection ismitigated or prevented from occurring in photo exposure, and thus, upperends of a signal bump BP-S and a thermal bump BP-T included in thesemiconductor chip 10 may have the same level. Accordingly, a contactdefect may be mitigated or prevented from occurring in the signal bumpBP-S and the thermal bump BP-T, thereby securing reliability of thesemiconductor chip 10 and efficiently dissipating heat generated fromthe semiconductor chip 10.

FIG. 16 is a cross-sectional view illustrating a semiconductor package 1including a semiconductor chip according to an example embodiment.

Referring to FIG. 16, the semiconductor package 1 may include aplurality of semiconductor chips 10 which are sequentially stacked on apackage substrate 20. The plurality of semiconductor chips 10 may bestacked in a vertical direction. In FIG. 16, the semiconductor package 1is illustrated as including five semiconductor chips 10, but is notlimited thereto. In other example embodiments, the semiconductor package1 may include two to four semiconductor chips 10 or six or moresemiconductor chips 10.

Each of the plurality of semiconductor chips 10 may include a pluralityof TSV structures 30. The plurality of TSV structures 30 may be providedin the pad region PR. The plurality of semiconductor chips 10 may beelectrically connected to each other by connecting corresponding TSVstructures 30. The plurality of semiconductor chips 10 may beelectrically connected to the package substrate 20 through the pluralityof TSV structures 30.

The package substrate 20 may be, for example, a printed circuit board, aceramic substrate, or an interposer. When the package substrate 20 isthe printed circuit board, the package substrate 20 may include asubstrate base, a top pad (not shown) provided on a top of the substratebase, and a bottom pad (not shown) provided on a bottom of the substratebase. The top pad and the bottom pad may be exposed by a solder resistlayer (not shown) that covers the top and bottom of the substrate base.The substrate base may be formed of at least one of phenol resin, epoxyresin, and polyimide. For example, the substrate base may include atleast one material selected from among FR4, tetrafunctional epoxy,polyphenylene ether, epoxy/polyphenylene oxide, bismaleimide triazine(BT), thermount, cyanate ester, polyimide, and liquid crystal polymer.The top pad and the bottom pad may each be formed of Cu, Ni, stainlesssteel, beryllium copper, and/or the like. An internal wiring (not shown)electrically connected to the top pad and the bottom pad may be providedin the substrate base. The top pad and the bottom pad may be portions ofcircuit wirings, which are formed by patterning Cu foils coated on thetop and bottom of the substrate base, exposed by the solder resistlayer.

When the package substrate 20 is an interposer, the package substrate 20may include a substrate base formed of a semiconductor material, a toppad (not shown) provided on a top of the substrate base, and a bottompad (not shown) provided on a bottom of the substrate base. Thesubstrate base may be formed from, for example, a silicon wafer. Also,an internal wiring (not shown) may be formed on the top, bottom, orinside of the substrate base. Also, a through via (not shown) thatelectrically connects the top pad to the bottom pad may be formed in theinside of the substrate base.

An external connection terminal 26 may be attached to the bottom of thepackage substrate 20. The external connection terminal 26, for example,may be attached to the bottom pad. The external connection terminal 26may be, for example, a solder ball or a bump. The external connectionterminal 26 may electrically connect the semiconductor package 1 to anexternal device.

A mold layer 300 surrounding some or all of the plurality ofsemiconductor chips 10 may be formed on the package substrate 20. Themold layer 300 may be formed of, for example, an epoxy mold compound(EMC).

In some example embodiments, the mold layer 300 may expose a top of anuppermost semiconductor chip 10 among the plurality of semiconductorchips 10, and a heat dissipating member (not shown) may be attached tothe mold layer 300 and the plurality of semiconductor chips 10 with athermal interface material (TIM) therebetween.

The TIM may be formed of an insulating material, or may be formed of theinsulating material and a material for maintaining electrical insulatingproperties. The TIM may include, for example, epoxy resin. The TIM maybe, for example, mineral oil, grease, gap filler putty, phase changegel, phase change material pads, particle filled epoxy, and/or the like.

The heat dissipating member may be, for example, heat sink, heatspreader, heat pipe, or liquid cooled cold plate.

The signal bump BP-S connected to the TSV structure 30 may be providedon a bottom of each of the plurality of semiconductor chips 10 in thepad region PR. The thermal bump BP-T may be provided on a bottom of eachof the plurality of semiconductor chips 10 in the cell region CR. Theplurality of semiconductor chips 10 may be supported by the signal bumpBP-S and the thermal bump BP-T. The thermal bump BP-T may beelectrically insulated from a plurality of individual devicesconfiguring a semiconductor device included in the semiconductor chip10.

Each of the plurality of semiconductor chips 10 may be at least one ofthe semiconductor chips 10, 10 a, 10 b, 10 c, 10-1, 10-2 and 10-3 ofFIGS. 1 to 15 or a combination thereof.

In the semiconductor package 1 according to an example embodiment, upperends of the signal bump BP-S and the thermal bump BP-T may have the samelevel, and a warpage may be mitigated or prevented from occurring in thesemiconductor chips 10. Accordingly, a contact defect may be mitigatedor prevented from occurring in the signal bump BP-S and the thermal bumpBP-T, thereby securing reliability of the semiconductor package 1 andefficiently dissipating heat generated from the semiconductor chips 10.

FIG. 17 is a cross-sectional view illustrating a semiconductor package 2including a semiconductor chip according to an example embodiment.

Referring to FIG. 17, the semiconductor package 2 may include a mainsemiconductor chip 500 attached to a package substrate 20 and aplurality of semiconductor chips 10 which are sequentially stacked onthe main semiconductor chip 500.

The semiconductor package 2 illustrated in FIG. 17 may be configured ina form where the main semiconductor chip 500 is further included in thesemiconductor package 1 illustrated in FIG. 16, and thus, details whichare similar to or the same as the details described above with referenceto FIG. 16 are not described.

The main semiconductor chip 500 may be a processor unit. The mainsemiconductor chip 500 may be, for example, a microprocessor unit (MPU)or a graphic processor unit (GPU). In some example embodiments, the mainsemiconductor chip 500 may be a package (i.e., a known good package(KGP)) for which a normal operation has been verified. The mainsemiconductor chip 500 may include a main TSV structure 530. The mainTSV structure 530 may have a structure similar to the TSV structure 30included in the semiconductor chip 10, and thus, its detaileddescription is not provided.

The TSV structure 30 of each of the plurality of semiconductor chips 10may be electrically connected to the main TSV structure 530 of the mainsemiconductor chip 500 corresponding thereto.

A main connection terminal 510 may be attached to a bottom of the mainsemiconductor chip 500. The plurality of semiconductor chips 10 and themain semiconductor chip 500 may be electrically connected to the packagesubstrate 20 through the main connection terminal 510. In some exampleembodiments, an under-fill material layer 520 surrounding the mainconnection terminal 510 may be further formed between the mainsemiconductor chip 500 and the package substrate 20. The under-fillmaterial layer 520 may be formed of, for example, epoxy resin. In someexample embodiments, the under-fill material layer 520 may be a portionof the mold layer 300 which is formed in a molded under-fill (MUF)method.

Each of the plurality of semiconductor chips 10 may be at least one ofthe semiconductor chips 10, 10 a, 10 b, 10 c, 10-1, 10-2 and 10-3 ofFIGS. 1 to 15 or a combination thereof.

In the semiconductor package 2 according to an example embodiment, upperends of a signal bump BP-S and a thermal bump BP-T may have the samelevel, and a warpage may be mitigated or prevented from occurring in thesemiconductor chips 10. Accordingly, a contact defect may be mitigatedor prevented from occurring in the signal bump BP-S and the thermal bumpBP-T, thereby securing reliability of the semiconductor package 2 andefficiently dissipating heat generated from the semiconductor chips 10included in the semiconductor package 2.

FIG. 18 is a cross-sectional view illustrating a semiconductor package 3including a semiconductor chip according to an example embodiment.

Referring to FIG. 18, the semiconductor package 3 may include a mainsemiconductor chip 500 a attached to a package substrate 20 and aplurality of semiconductor chips 10 which are sequentially stacked onthe package substrate 20.

Except that the main semiconductor chip 500 a and the sequentiallystacked plurality of semiconductor chips 10 are attached to differentportions of the package substrate 20, the semiconductor package 3illustrated in FIG. 18 may be similar to the semiconductor package 2illustrated in FIG. 17, and thus, its detailed description is notprovided.

In the semiconductor package 3 according to an example embodiment, upperends of a signal bump BP-S and a thermal bump BP-T may have the samelevel, and a warpage may be mitigated or prevented from occurring in thesemiconductor chips 10. Accordingly, a contact defect may be mitigatedor prevented from occurring in the signal bump BP-S and the thermal bumpBP-T, thereby securing reliability of the semiconductor package 3 andefficiently dissipating heat generated from the semiconductor chips 10included in the semiconductor package 3.

FIG. 19 is a plan view illustrating a configuration of a main part of asemiconductor module 1000 according to an example embodiment.

Referring to FIG. 19, the semiconductor module 1000 may include a modulesubstrate 1010, a control chip 1020, and a plurality of semiconductorpackages 1030. The control chip 1020 and the plurality of semiconductorpackages 1030 may be mounted on the module substrate 1010. A pluralityof input/output (I/O) terminals 1150 may be provided on the modulesubstrate 1010.

Each of the plurality of semiconductor packages 1030 may include atleast one of the semiconductor chips 10, 10 a, 10 b, 10 c, 10-1, 10-2and 10-3 of FIGS. 1 to 15 or a combination thereof.

FIG. 20 is a diagram schematically illustrating a configuration of asemiconductor package 1100 according to an example embodiment.

Referring to FIG. 20, the semiconductor package 1100 may include a MPU1110, a memory 1120, an interface 1130, a GPU 1140, a plurality offunction blocks 1150, and a bus 1160 connecting the elements. Thesemiconductor package 1100 may include all of the MPU 110 and the GPU1140, or may include only one of the MPU 110 or the GPU 1140.

The MPU 1110 may include a core and an L2 cache. For example, the MPU1110 may include a multi-core. Cores of the multi-core may have the sameperformance or different performances. Also, the cores of the multi-coremay be activated at the same time or at different times. The memory 1120may store a result of processing which is performed by each of thefunction blocks 1150 according to control by the MPU 1110. For example,when details stored in the L2 cache of the MPU 1110 are flushed, theprocessing result may be stored in the memory 1130. The interface 1130may perform an interface with external devices. For example, theinterface 1130 may perform an interface with a camera, a liquid crystaldisplay (LCD), a speaker, and/or the like.

The GPU 1140 may perform graphic functions. For example, the GPU 1140may perform video codec or may process three-dimensional (3D) graphic.

The function blocks 1150 may perform various functions. For example,when the semiconductor package 1100 is an AP applied to mobile devices,some of the function blocks 1150 may perform a communication function.

Each of the plurality of semiconductor packages 1100 may include atleast one of the semiconductor chips 10, 10 a, 10 b, 10 c, 10-1, 10-2and 10-3 of FIGS. 1 to 15 or a combination thereof or may be one of thesemiconductor packages 1, 2 and 3 of FIGS. 16 to 18.

FIG. 21 is a diagram illustrating an electronic system 1200 including asemiconductor package according to an example embodiment.

Referring to FIG. 21, the electronic system 1200 may be equipped with aMPU/GPU 1210. The electronic system 1200 may be, for example, a mobiledevice, a desktop computer, a server, or the like. Also, the electronicsystem 1200 may further include a memory device 1220, an input/output(I/O) device 1230, and a display device 1240, and the elements may beelectrically connected to a bus 1250. The MPU/GPU 1210 and memory device1220 may include at least one of the semiconductor chips 10, 10 a, 10 b,10 c, 10-1, 10-2 and 10-3 of FIGS. 1 to 15 or a combination thereof ormay be one of the semiconductor packages 1, 2 and 3 of FIGS. 16 to 18.

In the semiconductor chips, the semiconductor packages including thesame, and the methods of manufacturing the semiconductor chip accordingto the described example embodiments, a plurality of uppermost wiringsmay have the same width and may be arranged at an equal distance, and atop of a passivation layer may have a concave-convex shape which isconsistently repeated like a wave shaped surface, thereby mitigating orpreventing diffuse reflection from occurring in a photolithographyprocess of forming a bump which includes a signal bump and a thermalbump. Accordingly, a shape of the bump may be mitigated or preventedfrom being formed.

Further, according to the described example embodiments, thesemiconductor chip may avoid separately using a protection layer tocounteract a step height of the top of the passivation layer.Accordingly, a warpage may be mitigated or prevented from occurring inthe semiconductor chip. Further, an upper end of the signal bump and anupper end of the thermal bump may have the same level, therebymitigating or preventing a contact defect from occurring in the signalbump and the thermal bump. Accordingly, reliability of the semiconductorchip and the semiconductor package including the same is secured, andheat generated from the semiconductor chip is efficiently dissipated.

While the inventive concepts have been particularly shown and describedwith reference to some example embodiments thereof, it will beunderstood that various changes in form and details may be made thereinwithout departing from the spirit and scope of the following claims.

1. A semiconductor chip comprising: a semiconductor device layerincluding a pad region and a cell region, the semiconductor device layerincluding a plurality of through silicon via (TSV) structures in the padregion; a plurality of uppermost wirings on the semiconductor devicelayer, the plurality of uppermost wirings arranged at an equal distancein the cell region, the plurality of uppermost wirings having a samewidth and extending in parallel along one direction; a passivation layerin the cell region and the pad region, the passivation layer covering atleast a top surface of the plurality of uppermost wirings in the cellregion, the top surface of the passivation layer in the cell regionhaving a wave shape; and a plurality of thermal bumps on the passivationlayer, the plurality of thermal bumps electrically insulated from theplurality of uppermost wirings.
 2. The semiconductor chip of claim 1,further comprising: a plurality of pads on the semiconductor devicelayer, the plurality of pads connected to the plurality of TSVstructures in the pad region; and a plurality of signal bumps on theplurality of pads, the plurality of signal bumps electrically connectedto the plurality of pads.
 3. The semiconductor chip of claim 2, whereinthe passivation layer further covers a top surface of the plurality ofuppermost wirings in the pad region, and includes a bump hole exposing aportion of a top surface of each of the plurality of pads, and each ofthe plurality of signal bumps is connected to a respective one of theplurality of pads through the bump hole.
 4. The semiconductor chip ofclaim 2, wherein an upper end of each of the plurality of signal bumpsand an upper end of each of the plurality of thermal bumps have a samelevel.
 5. The semiconductor chip of claim 2, wherein the plurality ofsignal bumps and the plurality of thermal bumps have a same horizontalwidth.
 6. The semiconductor chip of claim 2, wherein the plurality ofsignal bumps are arranged at a first pitch, and the plurality of thermalbumps are arranged at a second pitch greater the first pitch.
 7. Thesemiconductor chip of claim 1, wherein the passivation layer comprisesan inorganic insulating material.
 8. The semiconductor chip of claim 1,wherein at least two adjacent upper wirings of the plurality ofuppermost wirings are electrically connected to each other to functionas one wiring.
 9. The semiconductor chip of claim 8, wherein at least aportion of each of the at least two adjacent uppermost wirings extendsunder at least one of the plurality of thermal bumps.
 10. Thesemiconductor chip of claim 8, wherein the at least two adjacentuppermost wirings are configured to transfer at least one of a powersignal or a ground signal.
 11. The semiconductor chip of claim 1,wherein a step height of the top surface of the passivation layer in thecell region is 100 nm or less.
 12. The semiconductor chip of claim 10,wherein a width of each of the plurality of uppermost wirings in thecell region is 200 nm to 500 nm.
 13. The semiconductor chip of claim 1,wherein a bottom surface of each of the plurality of thermal bumps has awave shape corresponding to the top surface of the passivation layer.14.-32. (canceled)
 33. A semiconductor chip including a pad region and acell region, the semiconductor chip comprising: a plurality of throughsilicon via (TSV) structures in the pad region; a plurality of uppermostwirings in the cell region, the plurality of uppermost wirings formingpart of circuit configurations of the semiconductor chip, adjacent onesof the plurality of uppermost wirings being spaced apart by a samedistance, each of the plurality of uppermost wirings having a samewidth, the plurality of uppermost wirings extending in parallel alongone direction; a passivation layer in the cell region and the padregion, the passivation layer covering at least a top surface of theplurality of uppermost wirings in the cell region, a top surface of thepassivation layer in the cell region having a wave shape; and aplurality of thermal bumps on the passivation layer, the plurality ofthermal bumps electrically insulated from the plurality of uppermostwirings.
 34. The semiconductor chip of claim 33, wherein the pluralityof uppermost wirings do not include redistribution wirings, which areprovided to make available at least some of the plurality of pads inother locations.
 35. The semiconductor chip of claim 33, furthercomprising: a plurality of pads on the semiconductor device layer in thepad region, the plurality of pads connected to the plurality of TSVstructures in the pad region; and a plurality of signal bumps on theplurality of pads, the plurality of signal bumps electrically connectedto the plurality of pads.
 36. The semiconductor chip of claim 35,wherein an upper end of each of the plurality of signal bumps and anupper end of each of the plurality of thermal bumps have a same level.37. The semiconductor chip of claim 33, wherein the passivation layerfurther covers a top surface of the plurality of uppermost wirings inthe pad region, and includes a bump hole exposing a portion of a topsurface of each of the plurality of pads, and each of the plurality ofsignal bumps is connected to a respective one of the plurality of padsthrough the bump hole.
 38. The semiconductor chip of claim 33, whereinat least two adjacent upper wirings of the plurality of uppermostwirings are electrically connected to each other to function as onewiring.
 39. The semiconductor chip of claim 38, wherein at least aportion of each of the at least two adjacent uppermost wirings extendsunder at least one of the plurality of thermal bumps.